中南大学 Haoran Gong

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[21]C. P. Liang and H. R. Gong*. Structural stability, mechanical property and phase transition of the Ti-H system. International Journal of Hydrogen Energy, 2010, 35: 11378-11386
[22]H. R. Gong. Electronic structures and related properties of Ag–Au bulks and surfaces. Materials Chemistry and Physics, 2010, 123: 326-330
[23]H. R. Gong. Interface properties of Pd/TiAl membranes with doping of N and O. Materials Letters, 2010, 64: 2354-2356
[24]C. P. Liang and H. R. Gong*. Phase stability, mechanical property, and electronic structure of Mg–Li system. Journal of Alloys and Compounds, 2010, 489: 130-135
[25]H. R. Gong. Electronic structure and related properties of Pd/TiAl membranes. Intermetallics, 2009, 17: 562-567
[26]H. R. Gong, C. P. Liang, and Y. H. He. Fundamental Influence of C on Cohesion of Pd/TiAl Interfaces. Journal of the Physical Society of Japan 2009, 78: 113601
[27]H. R. Gong. The work function and electronic structure of coherent Ag-Au interfaces. Solid State Communications 2009, 149: 2143-2145
[28]H.R. Gong and K. J. Cho. First principles study of Nb-W bilayer metal gate electrode. Microelectronic Engineering 2009, 86: 240-243
[29]H. R. Gong*, Y. H. He and B. Y. Huang. Bond strength and interface energy between Pd membranes and TiAl supports. Applied Physics Letters, 2008, 93: 101907
[30]H. R. Gong*, Y. Liu, H.P. Tang and C. S. Xiang. Bond strength and electronic structures of coherent Ir/Ir3Zr interfaces. Applied Physics Letters, 2008, 92: 211914
[31]H. R. Gong, Y. Nishi and K. J. Cho. Electronic structures of Nb-W bulk and surface from first principles calculation. Journal of Applied Physics, 2008, 103: 043702
[32]H. R. Gong. Ideal mechanical strengths of Ir and Ir3Zr. Scripta Materialia, 2008, 59: 1197-1199
[33]H.R. Gong and K. J. Cho. Electronic structure and related properties of Mo-W: a density functional study. Journal of Physics: Condensed Matter, 2008, 20: 255208
[34]H.R. Gong, Y. Nishi, and K. J. Cho. Effects of strain and interface on work function of a Nb-W metal gate system. Applied Physics Letters 2007, 91: 242105
[35]H.R. Gong and K. J. Cho. Electronic structure and work function of metal gate Mo-W system. Applied Physics Letters 2007, 91: 092106
[36]H.R. Gong and A. K. Ray. First principles calculation of localization of 5f electrons in bulk alpha-Plutonium. Journal of the Physical Society of Japan 2007, 76: 114701
[37]H.R. Gong and A. K. Ray. A fully relativistic full potential linearized augmented plane wave study of the (111) surface of -Pu. Surface Science 2006, 600: 2231-2241
[38]H.R. Gong and A. K. Ray. Quantum size effects in δ – Pu (110) films. European Physics Journal B, 2005, 48: 409-416
[39]J. W. Wang, M. Song, Y. H. He, and H. R. Gong*. Stability, adsorption, and diffusion of hydrogen in Pd3Ag phases. Journal of Membrane Science, 2016, 503: 124-131
[40]H.R. Gong and B.X. Liu. Influence of interfacial texture on solid-state amorphization and associated asymmetric growth in immiscible Cu-Ta multilayers.Physical Review B, 2004, 70: 134202 (p1-9)

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