Vacancy-induced resistive switching and synaptic behavior in flexible BST@Cf memristor crossbars
发布时间：2020-05-26
点击次数：
影响因子：4.527
DOI码：10.1016/j.ceramint.2020.05.262
所属单位：中南大学
发表刊物：Ceramics International
关键字：In this study, carbon fibers (Cf) coated with Ba0.6Sr0.4TiO3 (BST) (BST@Cf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future.
摘要：Flexible memristor Barium strontium titanate Carbon fiber No electroforming voltage Synaptic behavior
第一作者：Z. Wang
论文类型：期刊论文
通讯作者：C. Jiang
学科门类：工学
一级学科：材料科学与工程
文献类型：J
卷号：46
页面范围：21569-21577
是否译文：否
发表时间：2020-05-25