刘晓迟，女，中南大学物理与电子学院副教授，湖南省优青，湖南省科技创新“荷尖”人才（湖湘青年英才）。2012年于大连理工大学获得材料物理专业学士学位，获大连市优秀毕业生称号。2018年博士毕业于韩国成均馆大学先进纳米技术研究中心，获理学博士学位。长期以来专注于低维材料纳米器件载流子输运研究，研究方向包括改善低维材料器件的接触电阻、半导体器件改性以及多种半导体功能器件，致力于实现低能耗、高性能、多功能的复微纳电子功能器件及系统。研究涉及微纳电子学、微纳加工技术及半导体器件物理等。在Advanced Materials, ACS Nano, Nano Letters, IEEE EDL, APL等SCI期刊发表论文40余篇，主持国家级及省部级项目3项，拥有两项美国专利。2016年获得国家优秀自费留学生奖学金，2017年曾赴美国哥伦比亚大学访问学习。

代表论文成果

[1] X. Liu, Y. Pan, J. Yang, D. Qu, H.-M.  Li, W. J. Yoo^†, J. Sun^†, High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions, Applied Physics Letters, 118, 233101 (2021)

[2] X. Liu*, X. Zhou*, Y. Pan, J. Yang, H. Xiang, Y. Yuan, S. Liu, H. Luo, D. Zhang†, J. Sun†, Charge-ferroelectric transition in ultrathin Na_0.5Bi_4.5Ti₄O₁₅ flake probed via dual-gated full van der Waals transistor, Advanced Materials, 32(49), 2004813 (2020)

[3] X. Liu, D. Qu, L. Wang, M. Huang, Y. Yuan, P. Chen, Y. Qu†, J. Sun†, W. J. Yoo†, Charge density depinning in defective MoTe₂ transistor by oxygen intercalation, Advanced Functional Materials, 30(50), 202004880 (2020)  

[4] X. Liu, Y. Yuan, Z. Wang, R. S. Deacon, W. J. Yoo, J. Sun†, Directly Probing Effective-Mass Anisotropy of Two-Dimensional ReSe₂ in Schottky Tunnel Transistors, Physical  Review Applied, 13, 044056, (2020)

[5] X. Liu,  D. Qu,  M. S. Choi, C. Lee, H. Kim, W. J.  Yoo†, Homogeneous Molybdenum Disulfide Tunnel Diode Formed via Chemical Doping, Applied  Physics Letters, 112, 183103, (2018)

[6] X. Liu,  D. Qu, H. -M. Li, I. Moon, F. Ahmed, C. Kim, M. Lee, Y. Choi, J. H. Cho, J. Hone, W. J.  Yoo†, Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction. ACS Nano, 11(9), 9143-9150. (2017)

[7] D. Qu*, X. Liu*, M. Huang, C. Lee, F. Ahmed, H. Kim, R. Ruoff, J. Hone, W. J.  Yoo†, Carrier-Type Modulation and Mobility Improvement of Thin MoTe₂, Advanced  Materials, 29(39), 1606433, (2017)

[8] X. Liu,  D. Qu, J. Ryu, F. Ahmed, Yang Z, D. Lee, W. J.  Yoo†, P-Type Polar Transition of Chemically Doped Multilayer MoS₂ Transistor, Advanced  Materials, 28(12), 2345-2351, (2016)