Enhanced Thermoelectric Performance of Sn x Bi 0.5-x Sb 1.5 Te 3 Through the Synergistic Effects of Carrier and Phonon Engineering
发布时间：2021-09-17
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所属单位：中南大学材料科学与工程学院
教研室：材料学系
发表刊物：Journal of Electronic Materials
关键字：Bismuth telluride, thermoelectric materials, carrier engineering, phonon engineering
摘要：Sn x Bi 0.5-x Sb 1.5 Te 3 materials with high ZT values were prepared by vacuum melting, ball milling, cold pressing and ambient pressure sintering. The effect of Sn doping amount on the thermoelectric performance of Bi 0.5 Sb 1.5 Te 3 -based materials was investigated. The results showed that Sn doping increased the carrier concentration and DOS effective mass to improve the electrical con- ductivity and Seebeck coefficient, respectively, resulting in an increase in the power factor. Meanwhile, the reduction in lattice thermal conductivity was attributed to enhanced phonon scattering. The decrease in bipolar thermal conductivity was caused by the suppression of intrinsic excitation. Finally, compared with Bi 0.5 Sb 1.5 Te 3 , the power factor increased 66%, to 2.72 mWÆm ?1 ÆK ?2 , lattice thermal conductivity decreased by 28% to 0.334 WÆm ?1 ÆK ?1 , and the ZT value for Sn 0.01 Bi 0.49 Sb 1.5 Te 3 at 350 K was 1.33.
论文类型：应用研究
是否译文：否
发表时间：2020-04-17
收录刊物：SCI