SiC-SiO2 nanocomposite films prepared by laser CVD using tetraethyl orthosilicate and acetylene as precursors
发布时间：2021-07-16
点击次数：
DOI码：10.1016/j.matlet.2010.07.022
所属单位：中南大学
发表刊物：Materials Letters
关键字：Nanocomposites，SiC-SiO2，Laser CVD，Microstructure
摘要：SiC-SiO2 nanocomposite films were prepared by laser chemical vapor deposition (LCVD) using a CO2 laser with tetraethyl orthosilicate (TEOS) and acetylene (C2H2) as precursors. The effects of laser power on the crystal phase and microstructure of the SiC-SiO2 nanocomposite films were investigated. Films produced with laser power below 150W (below 1523 K) had an amorphous structure, while those produced above 200W (above 1673 K) were a mixture of crystalline SiC and amorphous phase. At 245 W (1774 K) the film contained 3C-SiC nanocrystals 100 to 200 nm in diameter dispersed in an amorphous matrix having high-density stacking faults formed on the ((1) over bar(1) over bar(1) over bar) and (11 (1) over bar) planes.
论文类型：期刊论文
卷号：64
期号：20
页面范围：2151-2154
是否译文：否
发表时间：2010-10-15