Strain Control of ThirdHarmonic Generation in Nb2SiTe4 Driven by Tuneable Anisotropic Characteristics
发布时间：2024-12-18
点击次数：
发表刊物：Advanced Functional Materials (Accepted)
关键字：third harmonic generation, nonlinear optics, anisotropic two-dimensional materials, strain engineering
摘要：Strain engineering constitutes one of the main control knobs for material properties. The material’s crystal and band structure can be strongly modified by mechanical strain, thus tailoring the electronic and photonic properties towards specific applications. However, the strain control of the higher-order nonlinear optical (NLO) processes in crystals characterized by in-plane anisotropy remains mostly unexplored. Here, we demonstrated that two-dimensional ternary Nb2SiTe4 crystals provide an excellent platform for tuning NLO properties with uniaxial strain due to the inherently anisotropic band structure around the fundamental band gap in the near-infrared region. By realizing resonant conditions between the interband excitations and third harmonic signals, we observed a record high third-order susceptibility of 2.43×10^(-18) m^2⁄V^2 , exceeding by over an order of magnitude the values reported for commonly used NLO crystals. The measurements of the third harmonic intensity as a function of the linear polarization revealed that the anisotropic characteristics of Nb2SiTe4 can be tuned into qualitatively different regimes by the application of a uniaxial strain along the principal crystallographic axes. Notably, with increasing strain, the characteristic anisotropic direction can be reoriented. Our findings provide unique perspectives for applying the modulation of the broadband NLO properties enabled by anisotropic materials in optoelectronics and all-optical devices.
合写作者：Zhenzhen Wan, Wenzhe Zhou, Tao Xu, Kostya S. Novoselov
第一作者：Yihang Ouyang#, Jin Dai#
论文类型：期刊论文
通讯作者：Maciej Koperski*, Zhihui Chen*, Jun He*
学科门类：理学
文献类型：J
是否译文：否
发表时间：2024-12-18
收录刊物：SCI