Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control
Hits:
Release time:2022-03-25 Impact Factor:5.316 DOI number:10.1016/j.jallcom.2022.164743 Affiliation of Author(s):中南大学 Journal:Journal of Alloys and Compounds Key Words:VolatileNon-volatile
Leaky Integrate-and-Fire
Nitrogen doped TiO2 NRAs
Resistive switching Abstract:It is attractive to manipulate the volatile and non-volatile resistive switching behaviors of memristors to create genuine neuromorphic systems such as artificial neural networks (ANNs) and spiking neural networks (SNNs). To investigate the above behaviors, nitrogen has been introduced into TiO2 nanorod arrays (TiO2 NRAs) by hydrothermal processing. X-ray photoelectron spectroscopy (XPS) analysis shows that both lattice and interstitial nitrogen are incorporated into the TiO2 NRAs. Nitrogen doped TiO2 NRAs (N-TiO2 NRAs) based memristive devices with different contents of lattice nitrogen were investigated systematically. The results show that non-volatile restive switching is achieved at up to a relative lattice nitrogen content of 21%, with volatile switching behavior above this value. The volatile memristive devices show similar spiking and decay features to the Leaky Integrate-and-Fire (LIF) model. The lifetime of the decay process of the volatile devices rang from 0.029 to 1.835 s. The longest lifetime is obtained when the relative content of lattice nitrogen is about 70%. The volatile behavior is related to the large defect concentration, caused by nitrogen doping. The proposed nitrogen engineered memristive devices could pave the way to achieving a physical neuromorphic system. First Author:Y. Yu Indexed by:Journal paper Correspondence Author:C. Jiang Discipline:Engineering First-Level Discipline:Materials Science and Engineering Document Type:J Volume:909 ISSN No.:0925-8388 Translation or Not:no Date of Publication:2022-03-22 Included Journals:SCI Links to published journals:https://www.sciencedirect.com/journal/journal-of-alloys-and-compounds -
|
 Office Phone:bd0325c25bbf64de75ab9f349d152dd6dcee48e0f6f89b8ab6acb9e25db4c810b4de90dee29e6a89e953ca69d7a06fdbfa266b14e9ce9525be286bfd1b724e05b078b112b1141fcd4aa5e644ee397c446f30d31bc325c36f34456d8a4a5e1f8719deeddaa90d745fd7de15dc1a847396abdccd2297421e9f8cb3671e6bf99288 Postal Address:b9e134567d928c547cc62b5676c3eb6d279131072ebc0486630748c2f2c726c600173d3b15f221a62d264f6f32178695233946ee5fe43ebc78a10fde566b49b94707da505debfc0dcf5e1c0a520ddf4ead5536100dda1dd3465cd1e3dedd1ea6c65b7232fa2a7b27c6e4724940f71ed25cfc603c0b6853e3dd78f4c2dd2233f3 Email:045a1415f7422e9c4e38fbfecde2003f01fa29089038e490cb597f0e192f14e608835d62499806c8515dc9da4fb42e9f89300b5a2146c12c61adabad06dcc64804eb8e608431fb69243756d67c1c5957c62bbfe79614fb715c869416d98f98ff7d4dfd68246dbdcaf63713e5b37b5a37fb995d85b03e905e71e238c6038be3cf
|
MOBILE Version
