一种氮掺杂二氧化钛阵列忆阻器及其制备方法
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Release time:2022-06-08 Affilication of Author(s):中南大学 Disigner of the Invention:jiangchao, 余延涛, Floyd, huangxiaozhong, Zuojuan DU Type of Patent:Invent State of Patent:Authorized patents Application Number:2019104297556 Authorization number:CN110137351B Number of Inventors:5 Service Invention or Not:no Application Date:2019-05-22 Publication Date:2019-08-16 Authorization Date:2022-05-22 -
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