Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance. Applied Physics Letters, 2010, 97: 052104 (IF:3.791)
Hits:
|
Pre One:Vertical Oxide Homojunction TFTs of 0.8 V Gated by H3PO4-Treated SiO2 Nanogranular Dielectric. IEEE Electron Device Letters, 2010, 31: 1263-1265 (IF:2.917)
Next One:Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature. Applied Physics Letters, 2009, 95: 152114 (IF:3.791)