Tuning the hysteresis voltage in 2D multilayer MoS2 FETs. Physica B: Condensed Matter, 2016, 498: 76-81 (IF:2.436)
发布时间：2018-03-27
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合写作者：Zhouming Zheng, Junjie Guo
第一作者：Jie Jiang*(蒋杰，通讯作者）
是否译文：否
上一条： Dual-Gate MoS2 Field-Effect Transistor with a Coplanar-Gate Engineering. IEEE Transactions on Electron Devices, 2016, 63: 573-577 (IF:2.917)
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