Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors. IEEE Electron Device Letters, 2011, 32: 500-502 (IF:2.917)
发布时间：2018-03-27
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合写作者：Jia Sun, Bin Zhou, Aixia Lu, Qing Wan
第一作者：Jie Jiang(蒋杰)
是否译文：否
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