Vertical Oxide Homojunction TFTs of 0.8 V Gated by H3PO4-Treated SiO2 Nanogranular Dielectric. IEEE Electron Device Letters, 2010, 31: 1263-1265 (IF:2.917)
发布时间：2018-03-27
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合写作者：Jia Sun, Bin Zhou, Aixia Lu, Qing Wan
第一作者：Jie Jiang(蒋杰)
是否译文：否
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