一种硫化铋半导体薄膜的制备方法
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Release time:2016-04-02 Patent Applicant:赖延清, 孙凯乐, 刘芳洋, 陈建宇, 汪颖, 蒋良兴 Disigner of the Invention:中南大学 Type of Patent:Invent State of Patent:Pending patent Application Number:01610065059.8 Service Invention or Not:no Application Date:2016-02-01 -
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 Zip Code:c576f0c85848a14d10428d1b79269fc7d68bde9ba6ecb95648b168a03671c3821c778c2bedf0cae5d03c95a065c3a5efa4243241acb9eb6089885db6f9f3fa7f5b7491eb5af48e7ab43d253e29e0fa6991b0af260ac98903cc7fbca150cb2fc86cb6bd41d95f78a263ba3d6f6aa504ee56cdd8693f2e6f13b576940cee3633de Postal Address:7ac195a5df9de9a43677939dd4b9415a1bf1bca466aec60c2fc0a0764908e30ef0cf11d6964f90d125cf10af7a45b17a58def7c71c5e819782d1c887ede11b1b3b9dd18272190fb23312bb917a97c1a13cd8a77eee980c0d3a8d37b767a209a562f61d5857045c6867cc8629b1bd4b906ed4ce5a886152fe1ebd897459c2d563 Mobile:5f77ffc33c90c8aa3b376d4c2a3fc63a01a4f65c54ddf56fe66107a82e2e6327f3b777b0ba1c3afe3659cb3600b850ee8e64ca2eb06d173f3c6eeaf3272c22a8a8e37a5b2e9c63db211749e26b741e5158bac209631346da94db6438627814c47a2feec1bd8d6305473f20bb703ea73107150b8a7012b09281d0a80136982edd Email:452872e4ef84f94a38732111d42c8bf5bc5e08012d6dbbcf277b15d839fc56dbf1acf4c7c5a788db8420daeb90599e109246875c14c41cb9a1dad6986a9cd5e17ebc1a7dd1d96166e11b0a2717150aef109d1f78fab76d13fab97eac86310c7e340f52f930ed9f4ed5339c9662362cc84e5ffe03616de94731801fe361a511df
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