Structure Assignment, Electronic Properties, and Magnetism Quenching of Endohedrally Doped Neutral Silicon Clusters, Si n Co (n= 10-12)
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- 发表刊物：The Journal of Physical Chemistry A
- 合写作者：MT Nguyen, VT Ngan, JT Lyon, AP Woodham, P Claes, NM Tam, YJ Li
- 期号：118 (37)
- 页面范围：8198–8203
- 是否译文：否
- 发表时间：2014-06-19
