Microwave absorption of SiC/HfCxN1-x/C ceramic nanocomposites with HfCxN1-x-Carbon core-shell particles
发布时间：2021-09-04
点击次数：
影响因子：3.78
发表刊物：Journal of the American Ceramic Society
摘要：The dielectric properties of high-temperature stable single-source precursor-derived SiC/HfCxN1−x/C ceramic nanocomposites are determined by microwave absorption in the X-band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfCxN1−x, respectively, show enhanced microwave absorption capability superior to hafnium-free SiC/C-1700°C. The minimum reflection loss of SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C are −47 and −32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfCxN1−x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfCxN1−x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment.
合写作者：Yao Feng, Dong-Liang Peng, Norbert Nicoloso, Emanuel Ionescu, Ralf Riedel
第一作者：Qingbo Wen
论文类型：期刊论文
通讯作者：Zhaoju Yu
文献类型：J
卷号：99
期号：8
页面范围：2655-2663
是否译文：否
发表时间：2016-08-01
收录刊物：SCI
发布期刊链接：https://ceramics.onlinelibrary.wiley.com/doi/10.1111/jace.14256