中文

Solution-Processed Lithium-Doped Zinc Oxide Thin-Film Transistors at Low Temperatures between 100-300 °C

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  • Release time:2016-04-06

  • Journal:Applied Physics A

  • Co-author:J. L. Yang*, Y. L. Gao, Y. L. Huang, P. Liu, *, J. Sun, C. Qian, F. M. Liu

  • Volume:122

  • Page Number:311

  • Translation or Not:no

  • Date of Publication:2016-04-06


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