Artificial Synapses Based on in-Plane Gate Organic Electrochemical Transistors
发布时间:2017-04-24
点击次数:
发表刊物:ACS Applied Materials & Interfaces
合写作者:* Q. Wan*, Y. L. Gao, J. He, J. L. Yang, G. Y. Gou, * L. A. Kong, J. Sun, C. Qian
卷号:2016, 8
页面范围:26169–26175.
是否译文:否
上一条: Largely-Increased Length of Silver Nanowires by Controlled Oxidative Etching Processes in Solvothermal Reaction and the Application in Highly Transparent and Conductive Networks
下一条: High-Quality CH3NH3PbI3 Thin Film Fabricated via Intramolecular Exchange for Efficient Planar Heterojunction Perovskite Solar Cells