Solution-Processed Lithium-Doped Zinc Oxide Thin-Film Transistors at Low Temperatures between 100-300 °C
发布时间:2016-04-06
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发表刊物:Applied Physics A
合写作者:J. L. Yang*, Y. L. Gao, Y. L. Huang, P. Liu, *, J. Sun, C. Qian, F. M. Liu
卷号:122
页面范围:311
是否译文:否
发表时间:2016-04-06