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SiC-SiO2 nanocomposite films prepared by laser CVD using tetraethyl orthosilicate and acetylene as precursors

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  • Release time:2021-07-16

  • DOI number:10.1016/j.matlet.2010.07.022

  • Affiliation of Author(s):中南大学

  • Journal:Materials Letters

  • Key Words:Nanocomposites,SiC-SiO2,Laser CVD,Microstructure

  • Abstract:SiC-SiO2 nanocomposite films were prepared by laser chemical vapor deposition (LCVD) using a CO2 laser with tetraethyl orthosilicate (TEOS) and acetylene (C2H2) as precursors. The effects of laser power on the crystal phase and microstructure of the SiC-SiO2 nanocomposite films were investigated. Films produced with laser power below 150W (below 1523 K) had an amorphous structure, while those produced above 200W (above 1673 K) were a mixture of crystalline SiC and amorphous phase. At 245 W (1774 K) the film contained 3C-SiC nanocrystals 100 to 200 nm in diameter dispersed in an amorphous matrix having high-density stacking faults formed on the ((1) over bar(1) over bar(1) over bar) and (11 (1) over bar) planes.

  • Indexed by:Article

  • Volume:64

  • Issue:20

  • Page Number:2151-2154

  • Translation or Not:no

  • Date of Publication:2010-10-15


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