SiC-SiO2 nanocomposite films prepared by laser CVD using tetraethyl orthosilicate and acetylene as precursors
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Release time:2021-07-16 DOI number:10.1016/j.matlet.2010.07.022 Affiliation of Author(s):中南大学 Journal:Materials Letters Key Words:Nanocomposites，SiC-SiO2，Laser CVD，Microstructure Abstract:SiC-SiO2 nanocomposite films were prepared by laser chemical vapor deposition (LCVD) using a CO2 laser with tetraethyl orthosilicate (TEOS) and acetylene (C2H2) as precursors. The effects of laser power on the crystal phase and microstructure of the SiC-SiO2 nanocomposite films were investigated. Films produced with laser power below 150W (below 1523 K) had an amorphous structure, while those produced above 200W (above 1673 K) were a mixture of crystalline SiC and amorphous phase. At 245 W (1774 K) the film contained 3C-SiC nanocrystals 100 to 200 nm in diameter dispersed in an amorphous matrix having high-density stacking faults formed on the ((1) over bar(1) over bar(1) over bar) and (11 (1) over bar) planes. Indexed by:Article Volume:64 Issue:20 Page Number:2151-2154 Translation or Not:no Date of Publication:2010-10-15 -
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