Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process
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Release time:2024-07-05
DOI number:10.1016/j.ceramint.2023.12.117
Journal:Ceramics International
Key Words:C/C composites
Silicon oxycarbide
CVD
Oxidation
Abstract:Silicon oxycarbide (SiOC) coatings were prepared through isothermal chemical vapor co-deposition by using two
precursors of hexamethyldisilane (HMDS) and tetraethyl orthosilicate (TEOS). The microstructure, composition
and the protectiveness on C/C composite against oxidation of the coatings prepared at temperatures ranging from
1423 K to 1563 K and pressures ranging from 500 Pa to 1200 Pa were investigated, respectively. After oxidation,
cracks and defects were formed in the coatings of all conditions due to the volume shrinkage of amorphous SiO2
crystallization and the mismatch of thermal expansion coefffcient (CTE) between SiOC coatings and substrate.
The most oxidation-resistant SiOC coating was obtained at 1563 K and 500 Pa, which exhibited the lowest weight
loss rate of 4.87 % after 12 h of oxidation at 1673 K in air condition.
Indexed by:Journal paper
Discipline:Engineering
First-Level Discipline:Materials Science and Engineering
Document Type:J
Volume:50
Page Number:7888–7896
Translation or Not:no
Date of Publication:2024-01-05
Included Journals:SCI
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Attachments:
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Microstructure and oxidation behavior of SiOC coatings on C C composites -闫俊杰2024.pdf
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