Distinguished Associate Professor
Supervisor of Master's Candidates
Date of Employment:2018-12-11
School/Department:Physical Science and Electronics
Education Level:PhD Graduate
Business Address:物理楼325
Sex:Male
Degree:Doctoral degree
Status:Employed
Alma Mater:中国科学院半导体研究所
Discipline:Electronic Science and Technology
Physics
钟绵增，博士，特聘副教授，博士生导师，硕士生导师
山东潍坊人，2012年本科毕业于浙江师范大学获理学学士学位；2018年毕业于中国科学院半导体研究所获理学博士学位（师从李京波教授、魏钟鸣教授）；2018年12月加入中南大学物理与电子学院工作。主要从事低维光电功能材料与微纳器件的制备及物性研究，在Nature、Nature Communication、Advanced Materials、Adv. Funct. Mater.、ACS Nano等国际期刊上合作发表论文40余篇，其中在Adv. Funct. Mater.; ACS Nano; Nano Research; npj 2D Materials and Applications; Applied Physics Letters等国际知名期刊以第一作者发表20余篇；主持国家自然科学基金面上项目、国家自然科学基金青年项目各一项，湖南省青年基金一项，2022年入选湖南省创新平台与人才计划——青年科技人才。
毕业学生1名，目前在读硕士研究生4名，联合培养博士生1名，联合培养硕士1名，其中3人已获国家奖学金。2023年招收硕士研究生1-2名，有意者请联系。
email：zmzhong@csu.edu.cn
主讲课程：《光学测量与光学工艺》《半导体器件》
申请专利情况：
(1) 李京波; 吴福根;陈颖, 钟绵增 一种三氧化钼薄膜的制备方法及制备的光电器件 , 2018.05.08-2036.03.03, 中国, ZL201610121111.7
(2) 钟绵增 ; 汤欣平; 李树深; 李京波, 一种二氧化钛-二硫化铁的核壳结构材料及其制备方法 , 2016.02.17-2035.10.09, 中国, CN201510650499.5
(3) 钟绵增 ; 汤欣平; 李树深; 李京波, 一种二硫化钒/石墨烯复合材料及其制备方法 , 2016.02.24-2035.10.09, 中国, CN201510650490.4
(4) 钟绵增 ; 吴宗泽; 孟秀清; 李庆跃; 李凯; 李京波, 一种电化学制备Zn4Sb3薄膜的方法 , 2013.03.19, 中国, CN201310087975.8
代表性论文：
11 Zhangxun Mo, Fen Zhang, Danyang Wang, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, and Mianzeng Zhong*. Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1. 85In0. 15S3 nanowire[J]. Applied Physics Letters, 2022, 120(20): 201105.
10 Fen Zhang, Yali Yu, Zhangxun Mo, Le Huang, Qinglin Xia, Bo Li, Mianzeng Zhong* & Jun He, Alloying-engineered high-performance broadband polarized Bi1.3In0.7Se3 photodetector with ultrafast response, Nano Research, (2022). https://doi.org/10.1007/s12274-022-4493-1.
9 Zhong Mianzeng; Meng Haotong; Liu Sijie; Yang Huai; Shen Wanfu; Hu Chunguang; Yang Juehan; Ren Zhihui; Li Bo; Liu Yunyan; He Jun*; Xia Qinglin*; Li Jingbo; Wei Zhongming*; In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic, ACS Nano, 2021, 15(1): 1701-1709.
8 Mianzeng Zhong, Chao Shen, Le Huang, Hui-Xiong Deng, Guozhen Shen, Houzhi Zheng, Zhongming Wei, and Jingbo Li. Electronic structure and exciton shifts in Sb-doped MoS2 monolayer. npj 2D Materials and Applications, 2019, 3(1), 1-7.
7 Le Huang, Mianzeng Zhong, (共同一作) HuiXiong Deng, Bo Li, ZhongMing Wei, JingBo Li, and SuHuai Wei. The Coulomb interaction in van der Waals heterostructures. Science China Physics, Mechanics & Astronomy 62, 037311 (2019).
6 Mianzeng Zhong, Ke Zhou, Zhongming Wei, Yan Li, Tao Li, Huanli Dong, Lang Jiang, Jingbo Li and Wenping Hu. Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α-MoO3 atomic crystals. 2D Materials, 2018, 5, 035033.
5 Mianzeng Zhong, Qinglin Xia, Longfei Pan, Yuqing Liu, Yabin Chen, Hui-Xiong Deng, Jingbo Li, and Zhongming Wei. Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic. Advanced Functional Materials 2018, 28, 1802581.
4 Mianzeng Zhong, Xinghua Wang, Sijie Liu, Bo Li, Le Huang, Yu Cui, Jingbo Li and Zhongming Wei. High-performance photodetectors based on Sb2S3 nanowires: wavelength dependence and wide temperature range utilization. Nanoscale, 2017, 9, 12364.
3 Mianzeng Zhong, Shuai Zhang, Le Huang, Jingbi You, Zhongming Wei, Xinfeng Liu and Jingbo Li. Large-scale 2D PbI2 monolayers: experimental realization and their indirect band-gap related properties. Nanoscale, 2017, 9, 3736.
2 Bo Li, Tao Xing, Mianzeng Zhong, Le Huang, Na Lei, Jun Zhang, Jingbo Li, Zhongming Wei. A two-dimensional Fe-doped SnS2 magneticsemiconductor, Nat. Commun. 2017, 8, 1958.
1 Bo Li, Le Huang, Mianzeng Zhong, Nengjie Huo, Yongtao Li, Shengxue Yang, Chao Fan, Juehan Yang, Wenping Hu, Zhongming Wei, and Jingbo Li. Synthesis and Transport Properties of Large-Scale Alloy Co0.16Mo0.84S2 Bilayer Nanosheets. ACS Nano, 2015,9,1257-1262.
