Atomic-scale interface strengthening unlocks efficient and durable Mg-based thermoelectric devices
发布时间：2025-04-16
点击次数：
影响因子：41.0
发表刊物：Nature materials
摘要：Solid-state thermoelectric technology presents a compelling solution for converting waste heat into electrical energy. However, its widespread application is hindered by long-term stability issues, particularly at the electrode–thermoelectric material interface. Here we address this challenge by constructing an atomic-scale direct bonding interface. By forming robust chemical bonds between Co and Sb atoms, we develop MgAgSb/Co thermoelectric junctions with a low interfacial resistivity (2.5 µΩ cm2), high bonding strength (60.6 MPa) and high thermal stability at 573 K. This thermally stable and ohmic contact interface enables MgAgSb-based thermoelectric modules to achieve a conversion efficiency of 10.2% at a temperature difference of 287 K and to exhibit negligible degradation over 1,440 h of thermal cycling. Our findings underscore the critical role of atomic-scale interface engineering in advancing thermoelectric semiconductor devices, enabling more efcient and durable thermoelectric modules.
合写作者：Yanxiao Cheng, Meng Jiang, Zhengqian Fu, Rui Liu, Guofeng Cheng, Rui Xu, Lianjun Wang, Denys Makarov
第一作者：Yuntian Fu, Ziyi Yu, Hongyi Chen, Wusheng Zuo
论文类型：期刊论文
通讯作者：Fangfang Xu, Qihao Zhang, Wan Jiang
期号：https://doi.org/10.1038/s41563-025-02167-0
是否译文：否
发表时间：2025-03-17