Patents
[1]一种利用熔盐法在石墨基体上制备碳化钽涂层的方法, 授权日期:2024-02-02, 授权号:ZL202310490851.8.
[2]一种多元碳化物陶瓷涂层的制备方法, 授权日期:2024-01-29, 授权号:ZL202310578344.X.
[3]一种非化学计量比多元碳化物陶瓷的制备方法, 授权日期:2023-12-19, 授权号:ZL202310504514.X.
[4]一种多通道化学气相沉积炉, 授权日期:2023-11-24, 授权号:ZL202321576603.7.
[5]一种原位生长SiC纳米线改性SiCf/SiC陶瓷基复合材料的制备方法及应用, 授权日期:2022-04-19, 授权号:ZL 202110725180.X.
[6]一种 SiCf/SiC 复合材料表面抗辐照抗空气氧化复合涂层及其制备方法. 申请日期:2021-03-29, 授权日期:2022-04-19, 授权号:ZL202110331522.X.
[7]一种SiC-TaC涂层/基体协同改性C/C复合材料制备方法, 授权日期:2013-04-17, 授权号:ZL 201110156494.9.
[8]一种双梯度碳化物改性C/C复合材料的制备方法, 授权日期:2013-10-09, 授权号:ZL 201110348234.1.
[9]一种SiC/TaC陶瓷复相界面改性C/C复合材料的制备方法, 授权日期:2013-06-26, 授权号:ZL 201210027554.1.
[10]一种在炭/炭复合材料表面制备陶瓷涂层的方法, 授权日期:2016-09-07, 授权号:ZL 201410844579.X.
[11]C/C复合材料表面ZrC-SiC涂层制备方法, 授权日期:2017-07-14, 授权号:ZL201510653315.0.
[12]一种低摩擦纳米TaC增强炭基复相薄膜的制备方法, 申请号:ZL201610062798.1, 授权日期:2018-01-23, 授权号:ZL201610062798.1.
total12 1/1 first previous next last
陈招科
Postal Address:1b25d882d4f004da1768247bbcc5d8e56c93b6ebe0e5c09797741c2b9086d6dc3d0ade0af035e965b0984db2569d764c306ab863a3729f140ade3a88bf0a5c03ff7826e65604f7cd468fe6b139345f58f4d967131a3d313be123addc992ac7ec8b4bbbf00b3d15bec8f65347efbcaba6219126d6a002124e58b168ff06359bec
Mobile:bf9a62b6cda2dc1923de72a1fcdfb259e79cfb5c4debe2c41b5327adb79673705adf3ee14a348813439a75c1ba08fb921e0133ffd361577316250312af7bbc30fb5e08d4f6440a349b6a9bff13e9f2d9337b1abc935d819f3bdf1aee7272cbb23e2b76aa87b61edad7b05055b1e066fe0a5d1df489f8dcee6a23283a5fcda26b
Email:acbfe7726f64b88ecd17163b01ca6cc92e99cd1b6acd6ec8ea8a89b33cb3d161d55e891bdeeb4573aa030d986566e74fbd7e099092643d15972b4bb5fa89b30e92cfdb57bf999ddf8e9bea26d5cc78b991c4c4bea84e869556d1e9a386d33e9621bcb56ef0e76942c089c4b078c116df9924d0d39e3f2941e201f96c190a28ec