中南大学龚浩然

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H.R. Gong and K. J. Cho. First principles study of Nb-W bilayer metal gate electrode. Microelectronic Engineering 2009, 86: 240-243

发布时间：2016-04-16

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发布期刊链接：http://lab.shily.me/publications/2009/Microelec.%20Eng.%2086-240.pdf

上一条： H. R. Gong. The work function and electronic structure of coherent Ag-Au interfaces. Solid State Communications 2009, 149: 2143-2145

下一条： H. R. Gong*, Y. H. He and B. Y. Huang. Bond strength and interface energy between Pd membranes and TiAl supports. Applied Physics Letters, 2008, 93: 101907