Journal Publications

• [61]Jie Jiang(蒋杰), Jia Sun, Bin Zhou, Aixia Lu, Qing Wan.Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors. IEEE Electron Device Letters, 2011, 32: 500-502 (IF:2.917)
• [62]Jie Jiang(蒋杰), Qing Wan, Jia Sun.Self-Assembled Ultralow-Voltage Flexible Transparent Thin-film Transistors Gated by SiO2-based Solid-Electrolyte. IEEE Transactions on Electron Devices, 2011, 58: 547-552 (IF:2.917)
• [63]Jie Jiang(蒋杰), Jia Sun, Dou Wei, Bin Zhou, Qing Wan.Junctionless in-plane-gate transparent thin-film transistors. Applied Physics Letters, 2011, 99: 193502 (IF:3.791)
• [64]Jie Jiang(蒋杰), Jia Sun, Bin Zhou, Aixia Lu, Qing Wan.Vertical Oxide Homojunction TFTs of 0.8 V Gated by H3PO4-Treated SiO2 Nanogranular Dielectric. IEEE Electron Device Letters, 2010, 31: 1263-1265 (IF:2.917)
• [65]Jie Jiang(蒋杰), Jia Sun, Bin Zhou, Aixia Lu, Qing Wan.Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance. Applied Physics Letters, 2010, 97: 052104 (IF:3.791)
• [66]Jie Jiang(蒋杰), Qing Wan, Jia Sun, Aixia Lu.Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature. Applied Physics Letters, 2009, 95: 152114 (IF:3.791)