Journal Publications

• [1]Kaiyun Gou, Jie jiang*（蒋杰，通讯作者）, Optimization Strategy of the Emerging Memristors: from Material Preparation to Device Applications, iScience, 27, 111327(2024)
• [2]Jinming Bi, Jie jiang*（蒋杰，通讯作者）, Electrolyte-gated optoelectronic transistors for neuromorphic applications, Journal of Semiconductors, 46, 021401(2025)
• [3]Rong Lu, Jie jiang*（蒋杰，通讯作者）, Recent Advances in Emerging Polarization-Sensitive Materials: From Linear/circular Polarization Detection to Neuromorphic Device Applications, Advanced Functional Materials
• [4]Zhuohui Huang, Jie jiang*（蒋杰，通讯作者）, 2D Multifunctional Devices: from Material Preparation to Device Fabrication and Neuromorphic Applications, International Journal of Extreme Manufacturing（极端制造）, 6,？032003(2024)
• [5]Yi Zhang, Jie jiang*（蒋杰，通讯作者）, Maskless Femtosecond‐Laser‐Processed Ionotronic Double‐Gate Transistor Array for Pattern Adaptation Emulation, Advanced Functional Materials, 34, 2400822(2024)
• [6]Zhuohui Huang, Jie jiang*（蒋杰，通讯作者）, An Au25？nanocluster/MoS2？vdWaals heterojunction phototransistor for chromamorphic visual-afterimage emulation, Nanoscale, 16, 17064-17078(2024)
• [7]Jin Hu, Jie jiang*（蒋杰，通讯作者）, A Photoelectrochemical Retinomorphic Synapse, Advanced Materials, 36, 2405887(2024)
• [8]Li, P, Jie jiang*（蒋杰，通讯作者）, Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems, Materials Horizons, 11, 4979-4986(2024)
• [9]Xie dingdong, Jie jiang*（蒋杰，通讯作者）, 0D-carbon-quantum-dots/2D-MoS2 mixed-dimensional heterojunction transistor for emulating pulsatile photoelectric therapy of visual amnesic behaviors. Science China Materials, 66, 4814–4824.(2023)(IF: 8.1)
• [10]Yu Diao, Jie jiang*（蒋杰，通讯作者）, Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications. Sensors, 23, 9779.(2023)(IF: 3.9)
• [11]Honglin Song, Jie jiang*（蒋杰，通讯作者）, Flexible Electrolyte-based Devices for Neuromorphic Electronics. IEEE Journal on Flexible Electronics(2023)
• [12]Yanran Li, Jie jiang*（蒋杰，通讯作者）, Bionic Research on Multistage Pain Sensitization Based on Ionic Oxide Transistor Array. Physica Status Solidi,17, 2300181(2023)(IF: 1.7)
• [13]Yanran Li, Jie jiang*（蒋杰，通讯作者）, Vertical Ion-Coupling Ga2O3 TFT With Spatiotemporal Logic Encryption. IEEE Transactions on Electron Devices, 70, 6, 3122-3125 (2023)(IF: 3.1)
• [14]Xie dingdong, Jie jiang*（蒋杰，通讯作者）, Porous Metal-organic-framework/ReS2 Heterojunction Phototransistor for Polarization-sensitive Visual Adaptation Emulation.Advanced Materials, 35, 2212118(2023)(IF: 32.086）
• [15]Yi Zhang, Jie Jiang*（蒋杰，通讯作者）, Zhuohui Huang.Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. Science and Technology of Advanced Materials,24,1(2023)(IF: 7.6617).
• [16]Jingya Su, Jie Jiang*（蒋杰，通讯作者）, Vertical 0.6-Volt Sub-10-nm Oxide-homojunction Transistor Gated by Silk Fibroin/Sodium Alginate Crosslinking Hydrogel for Pain-sensitization Enhancement Emulation.Materials Horizons,10, 1745-1756(2023)(IF：15.717).
• [17]Kai Yin, Jun He*, Guoqiang Li*, Jie Jiang*（蒋杰，通讯作者）, Qiaoqiao Huang, Qinwen Deng, Lingxiao Wang.Femtosecond laser thermal accumulation triggered micro/nanostructures with patternable and controllable wettability towards liquid manipulating, Nano-Micro Letters, 14, 97(2022)(IF：16.419).
• [18]Kai Yin, Ji-An Duan*, Jie Jiang*（蒋杰，通讯作者）, Junrui Wu*, Zhi Luo, Tingni Wu, Zhipeng Wu, Qinwen Deng.Tailoring micro/nanostructured porous polytetrafluoroethylene surfaces for dual-reversible transition of wettability and transmittance, Chemical Engineering Journal, 434, 134756(2022) (IF：13.273).
• [19]Dingdong Xie, Liming Ding*, Jie Jiang*（蒋杰，通讯作者）, Anisotropic 2D materials for post-Moore photoelectric devices. Journal of Semiconductors, 43, 010201(2022)
• [20]Changfa Tian, Jie Jiang*（蒋杰，通讯作者）, Liubo Wei, Yanran Li.Recent progress on two-dimensional neuromorphic devices and artificial neural network. Current Applied Physics, 31, 182-198(2021)