Low-voltage electric-double-layer MoS2 transistor gated via water solution. Solid State Electronics, 2018, 150: 8-15 (IF:1.901)
发布时间：2018-10-06
点击次数：
第一作者：Junjie Guo
通讯作者：Jie Jiang* (蒋杰，通讯作者）, Bingchu Yang*
是否译文：否
上一条： Y. J. Chen, C. H. Xu*, S. L. Hu, X. J. Zhao*, L. R. Xiao*, Z. Y. Cai. The thermodynamic stability and mechanical properties of TiCxN1-x(0 ≤ x ≤ 1) compounds by cluster expansion method and first-principles calculations. Journal of Physics: Condensed Matter, 2021, 33(15): 155701.
下一条： 稀土铝酸盐(RE4Al2O9)的研究现状与应用