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Novel p-n Type Heterojunction of Porous g-C3N4/CuS: Facile Synthesis at Low Temperature and Enhanced Visible-Light Photocatalytic Performance

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  • Release time:2016-04-25

  • Affilication of Author(s):中南大学粉末冶金研究院

  • Patent Applicant:吴雨欣, 马永进, 吴函硕, 陈熹, 潘军

  • Disigner of the Invention:吴雨欣, 马永进, 吴函硕, 陈熹, 潘军

  • Authorization number:201510855071.4

  • Number of Inventors:5

  • Service Invention or Not:no

  • First Author:陈熹

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  • Email:jun.pan@csu.edu.cn

  • Fax:+860731-88836646
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