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InGaN-based vertical light emitting diodes with HNO3 modified-graphene transparent conductive layer and high reflective membrane current blocking layer

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Release time:2018-02-07
Journal:Proc. R. Soc. A 469: 20120652 (2013).
Co-author:G. Wang, H. Zhu*, X. Yi*, Z. Liu, E. Guo, X. Li, Y. Zhang, Liancheng Wang
Document Type:J
Translation or Not:no

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