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Impurity Resonant States p-doping layer for High Efficiency Nitride Based Light-Emitting Diodes

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  • Release time:2018-11-07

  • Journal:Semicond. Sci. Technol

  • Co-author:Y. Zhang, Y. Shi, J. M. Li, J. X. Wang, T. B. Wei, G. D. Yuan, Liancheng Wang*, X. Y. Yi, Z. Q. Liu

  • Page Number:33 (2018) 114004

  • Translation or Not:no

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