Mechanism in Thermal Stress aided Electrodeless Etching of GaN Epitaxial on Sapphire and approaches to vertical devices
发布时间：2018-02-07
点击次数：
发表刊物：RSC Adv., 2013,3, 10934-10943
合写作者：G.Wang, X. Yi*, H. Yang, H. Xie, H. Zheng, Y. Zhang, Z. Liu, Liancheng Wang*
文献类型：J
是否译文：否