刘艳平

Observation of Double Indirect Interlayer Exciton in WSe2/WS2 Heterostructure

发布时间：2020-04-10

点击次数：

影响因子：3.98

DOI码：10.1364/OE.392052

发表刊物：Optics Express

关键字：Interlayer excitons, Coulomb interactions, van der Waals heterostructures ,transition metal dichalcogenides (TMDCs)

摘要：Interlayer excitons (IX) are produced by the spatially separated electron-hole pairs due to the robust Coulomb interactions in van der Waals transition metal dichalcogenides (TMDCs) heterostructures (HSS). IX is characterized by larger binding energy, and its lifetime is orders of magnitude longer than that of the direct excitons, providing a significant platform for the manufacture of long-lived exciton devices and the exploration of exciton quantum gas. However, the studies are restricted to the single interlayer exciton, and the simultaneous capture and study of double IX remain challenging in the WSe2/WS2 HS. Here, we demonstrate the existence of double indirect IX in the WSe2/WS2 HS with the emission centers at 1.4585eV (~25.9meV wide) and 1.4885eV (~14.4meV wide) at cryogenic temperature, respectively. Interestingly, the intensities of the double IXS emission peaks are almost equal, and the energy difference between them is in a good agreement with the cleavage value of the WS2 conduction band (CB). Additionally, diverse types of excitons in the individual materials are successfully observed in the PL spectra at 8K. Such unique double IX features, in combination with excellent exciton identification, open up new opportunities for further investigations for new physical properties of TMDCs and explorations for the technological innovation of exciton devices.

论文类型：期刊论文

通讯作者：J. Yu; XF. Kuang; YJ. Gao; YP. Wang; KQ. Chen; Liu, Z. W., Yanping Liu*(刘艳平).

文献类型：J

卷号：28

期号：9

页面范围：13260-13268

是否译文：否

发表时间：2020-04-10

收录刊物：SCI

发布期刊链接：https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-9-13260

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