SiOC flims on C/C composite prepared by chemical vapor deposition with hexamethyldisilazane precursor
发布时间：2022-04-13
点击次数：
DOI码：10.1016/j.ceramint.2022.04.079
发表刊物：ceramics International
关键字：Silicon oxycarbide CVD Hexamethyldisilazane (HMDSN) Microstructure Chemical composition
摘要：Silicon oxycarbide (SiOC) fflms on C/C composite substrate were prepared by isothermal chemical vapor deposition (CVD) with hexamethyldisilazane (HMDSN) as precursor. The deposition rate, microstructure, composition and mechanical properties of fflms prepared at deposition temperature ranging from 1300 K to 1576 K were investigated in details. With increasing deposition temperature, deposition rate increased gradually and reached a maximum value of 42.9 μm/h at 1513 K and then decreased; concurrently, the surface morphology of SiOC fflm changed from a smooth-dense to a coarse cauliffower, and then into a needle-like granular morphology. The SiOC fflms were composed of dominant SiC and a few other phases at all temperatures. In addition, the contents of oxygen-enriched units SiO3C and SiO2 increased with deposition temperature due to redistribution reaction of Si–O and Si–C bonds and oxidation. SiOC fflms prepared at 1373 K showed the highest hardness and elastic modulus for 28.8 GPa and 234.2 GPa, respectively. SiOC fflms also contained small amounts of Si3N4 and SiCN at all conditions.
论文类型：文章
学科门类：工学
文献类型：J
卷号：48
期号：14
页面范围：20887-20894
是否译文：否
发表时间：2022-04-13
收录刊物：SCI
附件：
SiOC films on CC composite prepared by chemical vapor deposition with吴秀美.pdf