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[21]L. Zhang, H. Y. Xu, Z. Q. Wang, X. N. Zhao, J. G. Ma, Y. C. Liu, Localized resistive switching in ZnS-Ag/ZnS double-layer memory.J. Phys. D: Appl. Phys., 2014, 47 (455101)
[22]L. Zhang, H. Y. Xu, Z. Q. Wang, H. Yu, X. N. Zhao, J. G. Ma, and Y. C. Liu,, Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments.Appl. Phys. Lett., 2014, 104 (093512)
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