中南大学 zhanglei

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张磊

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[21]L. Zhang, H. Y. Xu, Z. Q. Wang, J. G. Ma and Y. C. Liu, Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory.Mater. Lett., 2015, 154 (98)
[22]L. Zhang, H. Y. Xu, Z. Q. Wang, H. Yu, X. N. Zhao, J. G. Ma, and Y. C. Liu, Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device.Applied Surface Science, 2016, 360 (338)
[23]L. Zhang, H. Y. Xu, Z. Q. Wang, X. N. Zhao, J. G. Ma, Y. C. Liu, Localized resistive switching in ZnS-Ag/ZnS double-layer memory.J. Phys. D: Appl. Phys., 2014, 47 (455101)
[24]L. Zhang, H. Y. Xu, Z. Q. Wang, H. Yu, X. N. Zhao, J. G. Ma, and Y. C. Liu,, Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments.Appl. Phys. Lett., 2014, 104 (093512)

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