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[1] The nature of lithium-ion transport in low power consumption LiFePO4 resistive memory with graphite as electrode physica status solidi (RRL) – Rapid Research Letters, 2018, 12(1800320):
[2] Multilevel resistive switching in pn heterostructure memory Journal of Nanoscience and Nanotechnology, 2019, 19(130):
[3] The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device Journal of Materials Science: Materials in Electronics, 2019, 30(8629):
[4] p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications Journal of Alloys and Compounds, 2017, 721(520):
[5] Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM Scientific Reports, 2017, 7(45143):
[6] Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory Mater. Lett., 2015, 154(98):
[7] Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device Applied Surface Science, 2016, 360(338):
[8] Localized resistive switching in ZnS-Ag/ZnS double-layer memory J. Phys. D: Appl. Phys., 2014, 47(455101):
[9] Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments Appl. Phys. Lett., 2014, 104(093512):
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