Language :
English
中文
张磊
Home
Journal Publications
Research Projects
Books
Patents
Teaching
Honors and Awards
MOBILE Version
Journal Publications
Current position:
Home
>
Journal Publications
[1] Light-Induced Conductance Potentiation and Depression in an AllOptically Controlled Memristor ACS Appl. Mater. Interfaces, 2024, 16: 27866
[2] Building a depletion-region width modulation model and realizing memory characteristics in PN heterostructure devices？ Nanoscale, 2024, 16: 15722
[3] Improved resistive switching characteristics in？the？p+？Si/ZnO:Al/Ni heterojunction device
[4] Multilevel and Low-power Resistive Switching Based on pn Heterojunction memory
[5] Growth of continuous GaN films on ZnO buffer layer by chemical vapor deposition for ultraviolet photodetector
[6] Wide Waveband Light Detection and Storage Device for Visual Memory
[7] Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p+-Si/n-ZnO Heterojunction Memristor IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023,
[8] p +-Si/n-ZnO/Ni Heterojunction Optoelectronic Synaptic Device for Visual Memory IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023,
[9] Memristive Characteristics of the Single-Layer P-Type CuAlO2 and N-Type ZnO Memristors Materials, 2022, 15: 3637
[10] Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation Adv. Electron. Mater, 2020,
[11] Influence of Al content on ZnO/Al bilayer-structure ultraviolet photodetector Semiconductor Science and Technology,
[12] Amorphous gallium oxide (a-Ga2O3)-based high-temperature bendable solar-blind ultraviolet photodetector Semiconductor Science and Technology, 2021,
[13] Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors Semiconductor Science and Technology, 2020, 35: 125025
[14] Flexible and thermally stable resistive switching memory in a Ta/TaO x/stainless steel structure Semiconductor Science and Technology, 2020,
[15] Influence of Deposition Temperature on Amorphous Ga2O3 Solar-blind Ultraviolet Photodetector Semiconductor Science and Technology, 2020, 35: 055037
total24 1/2
first
previous
next
last
Page
