Optoelectrical Switching of Nonfullerene Acceptor Y6 and BPQD-Based Bulk Heterojunction Memory Device through Photoelectric Effect
发布时间：2021-01-29
点击次数：
发表刊物：Adv. Electron. Mater.
合写作者：Minchao Gu, Zhizheng Zhao, Kexin Wang, Yuelin Huang, Bin Zhang,* Yingping Zou,* Mohamed E. El-Khouly, and Yu Chen*
页面范围：2001191(1-7)
是否译文：否
发表时间：2021-01-29