中文

Current induced doping in graphene-based transistor with asymmetrical contact barriers

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  • Release time:2022-07-08

  • DOI number:10.1063/1.4867018

  • Journal:Applied Physics Letters

  • Co-author:ShiQiao Qin, Sen Zhang, Jingyue Fang

  • First Author:Wei Chen

  • Indexed by:Journal paper

  • Correspondence Author:XueAo Zhang

  • Discipline:Natural Science

  • First-Level Discipline:Physics

  • Document Type:J

  • Volume:104

  • Issue:8

  • Page Number:083115-083118

  • Translation or Not:no

  • Date of Publication:2014-02-27

  • Included Journals:SCI


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