A Homogeneous P-N Junction Diode by Selective Doping of Few Layer Mose2 Using Ultraviolet Ozone for High-Performance Photovoltaic Devices. Nanoscale 2019, 11, 13469-13476
发布时间:2019-07-11
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合写作者:Han Huang(黄寒)*, .....Xueao Zhang*, Jiao Shi, Shitan Wang, Jinxin Liu, Yuehua Wei, Xiaoming Zheng
文献类型:J
是否译文:否