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- [42]Zhouming Zheng, Jie Jiang*(蒋杰,通讯作者), Junjie Guo, Junliang Yang, Yongli Gao.Bio-Inspired Coplanar-Gate-Coupled ITO-Free Oxide-Based Transistors Employing Natural Nontoxic Bio-Polymer Electrolyte. Organic Electronics, 2016, 37: 474-478 (IF:3.721)
- [43]Jie Jiang*(蒋杰,通讯作者), Sarit Dhar*, Ayayi C. Ahyi.Dual-Gate MoS2 Field-Effect Transistor with a Coplanar-Gate Engineering. IEEE Transactions on Electron Devices, 2016, 63: 573-577 (IF:2.917)
- [44]Jie Jiang*(蒋杰,通讯作者), Zhouming Zheng, Junjie Guo.Tuning the hysteresis voltage in 2D multilayer MoS2 FETs. Physica B: Condensed Matter, 2016, 498: 76-81 (IF:2.436)
- [45]Jie Jiang*(蒋杰,通讯作者), Sarit Dhar*, Tuning threshold voltage from depletion to enhancement mode in multilayer MoS2 transistor via oxygen adsorption and desorption. Physical Chemistry Chemical Physics, 2016, 18: 685-689 (IF:3.676)
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- [47]Jie Jiang(蒋杰), Qing Wan*, Qing Zhang.Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-based Biopolymer Electrolyte. IEEE Transactions on Electron Devices, 2013, 60: 1951-1957 (IF:2.917)
- [48]Jie Jiang(蒋杰), Xinghui Wang, Qing Zhang, Jingqi Li, X. X. Zhang.Thermal Oxidation of Ni Films for P-type Thin-film Transistors. Physical Chemistry Chemical Physics, 2013, 15: 6875-6878 (IF:3.676)
- [49]Jie Jiang(蒋杰), Jia Sun, Wei Dou, Qing Wan.Junctionless flexible oxide-based thin-film transistors on paper substrates. IEEE Electron Device Letters, 2012, 33: 65-67 (IF:2.917)
- [50]Jie Jiang(蒋杰), Jia Sun, Liqiang Zhu, Guodong Wu, Qing Wan.Dual in-plane-gate oxide-based thin-film transistors with tunable threshold voltage. Applied Physics Letters, 2011, 99: 113504 (IF:3.791)
- [51]Jie Jiang(蒋杰), Minzhi Dai, Jia Sun, Bin Zhou, Aixia Lu, Qing Wan.Electrostatic modification of oxide semiconductors by electric double layers of microporous SiO2-based solid electrolyte. Journal of Applied Physics, 2011, 109: 054501 (IF:2.546)
- [52]Jie Jiang(蒋杰), Jia Sun, Wei Dou, Bin Zhou, Qing Wan.In-plane-gate indium-tin-oxide thin-film transistors self-assembled on paper substrates. Applied Physics Letters, 2011, 98: 113507 (IF:3.791)
- [53]Jie Jiang(蒋杰), Jia Sun, Bin Zhou, Aixia Lu, Qing Wan.Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors. IEEE Electron Device Letters, 2011, 32: 500-502 (IF:2.917)
- [54]Jie Jiang(蒋杰), Qing Wan, Jia Sun.Self-Assembled Ultralow-Voltage Flexible Transparent Thin-film Transistors Gated by SiO2-based Solid-Electrolyte. IEEE Transactions on Electron Devices, 2011, 58: 547-552 (IF:2.917)
- [55]Jie Jiang(蒋杰), Jia Sun, Dou Wei, Bin Zhou, Qing Wan.Junctionless in-plane-gate transparent thin-film transistors. Applied Physics Letters, 2011, 99: 193502 (IF:3.791)
- [56]Jie Jiang(蒋杰), Jia Sun, Bin Zhou, Aixia Lu, Qing Wan.Vertical Oxide Homojunction TFTs of 0.8 V Gated by H3PO4-Treated SiO2 Nanogranular Dielectric. IEEE Electron Device Letters, 2010, 31: 1263-1265 (IF:2.917)
- [57]Jie Jiang(蒋杰), Jia Sun, Bin Zhou, Aixia Lu, Qing Wan.Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance. Applied Physics Letters, 2010, 97: 052104 (IF:3.791)
- [58]Jie Jiang(蒋杰), Qing Wan, Jia Sun, Aixia Lu.Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature. Applied Physics Letters, 2009, 95: 152114 (IF:3.791)