Language : English
  • Personal Information

    Distinguished Associate Professor

    Supervisor of Master's Candidates

    School/Department:Physical Science and Electronics

    Administrative Position:Associate Professor

    Education Level:PhD Graduate

    Business Address:新校区物理与电子学院325



    Degree:Doctoral degree


    Alma Mater:Sungkyunkwan University

    Discipline:Electronic Science and Technology

    Honors and Titles:
  • Profile

    刘晓迟,女,中南大学物理与电子学院特聘副教授。2012年于大连理工大学获得材料物理专业学士学位,获大连市优秀毕业生称号。2018年博士毕业于韩国成均馆大学先进纳米技术研究中心,获理学博士学位。长期以来专注于低维材料纳米器件载流子输运研究。研究方向包括改善低维材料器件的接触电阻、半导体器件改性以及多种半导体功能器件。致力于实现低能耗、高性能、多功能的复微纳电子功能器件及系统。研究涉及微纳电子学、微纳加工技术及半导体器件物理等。在Advanced Materials, ACS Nano, APL等SCI期刊发表论文20余篇,拥有两项美国专利,多次在国际顶尖会议作发言报告。博士期间,多次参与实验室与三星电子合作项目并担任子项目负责人。2016年获得国家优秀自费留学生奖学金,2017年曾赴美国哥伦比亚大学交流访问学习。


    [1] X. Liu, Y. Pan, J. Yang, D. Qu, H.-M.  Li, W. J. Yoo, J. SunHigh performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions, Applied Physics Letters, 118, 233101 (2021)

    [2] X. Liu*, X. Zhou*, Y. Pan, J. Yang, H. Xiang, Y. Yuan, S. Liu, H. Luo, D. Zhang†, J. Sun†, Charge-ferroelectric transition in ultrathin Na0.5Bi4.5Ti4O15 flake probed via dual-gated full van der Waals transistor, Advanced Materials, 32(49), 2004813 (2020)

    [3] X. Liu, D. Qu, L. Wang, M. Huang, Y. Yuan, P. Chen, Y. Qu†, J. Sun†, W. J. Yoo†, Charge density depinning in defective MoTe2 transistor by oxygen intercalation, Advanced Functional Materials, 30(50), 202004880 (2020)  

    [4] X. Liu, Y. Yuan, Z. Wang, R. S. Deacon, W. J. Yoo, J. Sun†, Directly Probing Effective-Mass Anisotropy of Two-Dimensional ReSe2 in Schottky Tunnel Transistors, Physical  Review Applied, 13, 044056, (2020)

    [5] X. Liu,  D. Qu,  M. S. Choi, C. Lee, H. Kim, W. J.  Yoo†, Homogeneous Molybdenum Disulfide Tunnel Diode Formed via Chemical Doping, Applied  Physics Letters, 112, 183103, (2018)

    [6] X. Liu,  D. Qu, H. -M. Li, I. Moon, F. Ahmed, C. Kim, M. Lee, Y. Choi, J. H. Cho, J. Hone, W. J.  Yoo†, Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction. ACS Nano, 11(9), 9143-9150. (2017)

    [7] D. Qu*X. Liu*, M. Huang, C. Lee, F. Ahmed, H. Kim, R. Ruoff, J. Hone, W. J.  Yoo†, Carrier-Type Modulation and Mobility Improvement of Thin MoTe2Advanced  Materials, 29(39), 1606433, (2017)

    [8] X. Liu,  D. Qu, J. Ryu, F. Ahmed, Yang Z, D. Lee, W. J.  Yoo†, P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor, Advanced  Materials, 28(12), 2345-2351, (2016)

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  • Education Background

    [1]  2008.9- 2012.6
    大连理工大学 | University graduated | Bachelor's Degree in Science
    [2]  2012.9- 2018.2
    成均馆大学 | PhD Graduate | Doctoral Degree in Science
    [3]  2017.3- 2017.9
    哥伦比亚大学 | 机械工程 | 访问学者 | 访问学者
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