Novel p-n Type Heterojunction of Porous g-C3N4/CuS: Facile Synthesis at Low Temperature and Enhanced Visible-Light Photocatalytic Performance
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Release time:2016-04-25 Affilication of Author(s):中南大学粉末冶金研究院 Patent Applicant:吴雨欣, 马永进, 吴函硕, 陈熹, 潘军 Disigner of the Invention:吴雨欣, 马永进, 吴函硕, 陈熹, 潘军 Authorization number:201510855071.4 Number of Inventors:5 Service Invention or Not:no First Author:陈熹 -
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 Email:5bfd4ef65257a89ded30aa9b657fd91cface845c926227476bdb44d063180712941767cc5ae731887e3df19f918c279334b9d88abfb62f48e3f4965ab17f5addfb7386bfc1c91ebced8f06163fe6d8002564f7cdbf1490071a23d8928e67645ec07439bfb9f0ef250af395ca3fc0c4711a86b5a65e59e7674f5be203befc1f16 Fax:ade192c932b30dfa2e5c5cf7d57b192b5f46373eb352aff36317ccbca6deacff9ac0f8dd540142aec93f56893b70e266d5cf1f241256ab20d4a57bf8d4186b8ffdd680222bae776ef2adc06eb58fbccf2fddb1cc67d5a457e35f2c47b8f46c39543c964470e2e1bc801338d742612f180779ac3129a2f665e473f33e1c0fb5c1
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