InGaN-based vertical light emitting diodes with HNO3 modified-graphene transparent conductive layer and high reflective membrane current blocking layer
发布时间：2018-02-07
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发表刊物：Proc. R. Soc. A 469: 20120652 (2013).
合写作者：G. Wang, H. Zhu*, X. Yi*, Z. Liu, E. Guo, X. Li, Y. Zhang, Liancheng Wang
文献类型：J
是否译文：否