Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%)
发布时间：2018-02-07
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发表刊物：J. Phys. D Appl. Phys. 47 (2014)115102
合写作者：G. Wang, J. Li, Z. Liu, X. Yi*, J. Guo, T. Zhan, Liancheng Wang*, T. Tian
文献类型：J
是否译文：否