High efficiency and low droop of 400 nm InGaN near-ultraviolet light-emitting diodes through suppressed leakage current
发布时间：2018-02-07
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发表刊物：IEEE J. Quantum Electronics 51, 9, 2015
合写作者：G. Wang, J. Li, X. Yi, Z. Q. Liu, Z. Li, J. Kang, Z. H. Zhang, Liancheng Wang, H. Li*, P. Li
文献类型：J
是否译文：否