InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition to suppress the Auger recombination
发布时间：2018-02-07
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发表刊物：Appl. Phys. Lett. 105, 033506 (2014)
合写作者：H. V., *, X. Wei Sun, Liancheng Wang, X. Zhang, Z. Kyaw, Y. Ji, ST. Tan, Z. Ju, W. Liu, Z-H. Zhang
文献类型：J
是否译文：否