Nonradiative recombination-critical in choosing quantum well number for InGaN/GaN light-emitting diodes
发布时间：2018-02-07
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发表刊物：Optics Express23 (3), A34-A42,2015
合写作者：N. Hasa, Z. Kyaw, Liancheng Wang, Y. Ji, X. Zhang, Z. G. Ju, ST. Tan, W.Liu, Z-H. Zhang, Y. P. Zhang
文献类型：J
是否译文：否