Impurity Resonant States p-doping layer for High Efficiency Nitride Based Light-Emitting Diodes
发布时间：2018-11-07
点击次数：
发表刊物：Semicond. Sci. Technol
合写作者：Y. Zhang, Y. Shi, J. M. Li, J. X. Wang, T. B. Wei, G. D. Yuan, Liancheng Wang*, X. Y. Yi, Z. Q. Liu
页面范围：33 (2018) 114004
是否译文：否