SiOC flims on C/C composite prepared by chemical vapor deposition with hexamethyldisilazane precursor
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Release time:2022-04-13 DOI number:10.1016/j.ceramint.2022.04.079 Journal:ceramics International Key Words:Silicon oxycarbide
CVD
Hexamethyldisilazane (HMDSN)
Microstructure
Chemical composition Abstract:Silicon oxycarbide (SiOC) fflms on C/C composite substrate were prepared by isothermal chemical vapor
deposition (CVD) with hexamethyldisilazane (HMDSN) as precursor. The deposition rate, microstructure,
composition and mechanical properties of fflms prepared at deposition temperature ranging from 1300 K to
1576 K were investigated in details. With increasing deposition temperature, deposition rate increased gradually
and reached a maximum value of 42.9 μm/h at 1513 K and then decreased; concurrently, the surface morphology
of SiOC fflm changed from a smooth-dense to a coarse cauliffower, and then into a needle-like granular
morphology. The SiOC fflms were composed of dominant SiC and a few other phases at all temperatures. In
addition, the contents of oxygen-enriched units SiO3C and SiO2 increased with deposition temperature due to
redistribution reaction of Si–O and Si–C bonds and oxidation. SiOC fflms prepared at 1373 K showed the highest
hardness and elastic modulus for 28.8 GPa and 234.2 GPa, respectively. SiOC fflms also contained small amounts
of Si3N4 and SiCN at all conditions. Indexed by:Article Discipline:Engineering Document Type:J Volume:48 Issue:14 Page Number:20887-20894 Translation or Not:no Date of Publication:2022-04-13 Included Journals:SCI -
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SiOC films on CC composite prepared by chemical vapor deposition with吴秀美.pdf
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