直流电阻率有限单元法模拟的第三类边界条件处理方法

- School Sign:
- 中南大学
- Patent Applicant:
- 中南大学
- Disigner of the Invention:
- Zhenwei Guo, 麻昌英, 柳建新
- Type of Patent:
- Invent
- State of Patent:
- Authorized patents
- Authorization number:
- ZL 2018 1 0097455.8
- Number of Inventors:
- 3
- Service Invention or Not:
- no
- Application Date:
- 2018-01-31
- Publication Date:
- 2019-10-08
- Authorization Date:
- 2019-10-08
- First Author:
- 柳建新
- Pre One:一种频率域天然电场三维勘探方法


