Optoelectrical Switching of Nonfullerene Acceptor Y6 and BPQD-Based Bulk Heterojunction Memory Device through Photoelectric Effect
发布时间:2021-01-29
点击次数:
发表刊物:Adv. Electron. Mater.
合写作者:Minchao Gu, Zhizheng Zhao, Kexin Wang, Yuelin Huang, Bin Zhang,* Yingping Zou,* Mohamed E. El-Khouly, and Yu Chen*
页面范围:2001191(1-7)
是否译文:否
发表时间:2021-01-29
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